The Effect of Trace Amounts of Water Vapor on Boron Doping in Epitaxially Grown Silicon

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Abstract
It was found that silicon epitaxy from silane can tolerate unexpectedly high water concentrations in the gas phase before deterioration of the growing layer sets in. The extent of boron doping from , however, is shown to be strongly influenced by water vapor concentrations in the ppm region. It is shown that gas at partial pressures greater than 10−3 atm has a similar influence on the extent of boron doping and that it makes the system less susceptible to small variations in water vapor concentrations. The results can be explained by consideration of the various gas phase equilibria at or near the silicon‐gas interface.

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