Pulsed electron-beam annealing of phosphorus-implanted silicon
- 17 January 1980
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 16 (2) , 54-55
- https://doi.org/10.1049/el:19800041
Abstract
Electrical properties of phosphorus-implanted silicon annealed by a single shot of a high-power pulsed electron beam have been studied by differential Hall-effect and sheet-resistivity measurements. Nearly 100% electrical activation of implanted phosphorus can be obtained after electron-beam annealing at an incident energy density of 0.92 J/cm2. Uniformly distributed carrier concentration profiles have been formed by electron-beam annealing.Keywords
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