1.3 mu m semiconductor laser power amplifier
- 1 January 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 1 (1) , 2-3
- https://doi.org/10.1109/68.87875
Abstract
The performance of a 3.4-Gb/s system using a low-power 1.318- mu m distributed-feedback (DFB) laser transmitter and a traveling-wave semiconductor laser power amplifier is studied. The -14.5-dBm, input from a directly modulated DFB laser is boosted to +10.3 dBm, of which +4.8 dBm is coupled into the transmission fiber. The penalty, caused by amplifier noise and pattern effects due to gain saturation, is less than 0.5 dB.Keywords
This publication has 1 reference indexed in Scilit:
- Broadband 1.5μm GaInAsP travelling-wave laser amplifier with high-saturation output powerElectronics Letters, 1987