Quantum Theory of Cyclotron Resonance in Semiconductors: General Theory
- 15 May 1956
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 102 (4) , 1030-1041
- https://doi.org/10.1103/physrev.102.1030
Abstract
The most general form of the Hamiltonian of an electron or hole in a semiconductor such as Si or Ge, in the presence of an external homogeneous magnetic field, is given. Two methods of obtaining the corresponding energy levels are discussed. The first should yield very accurate values for the magnetic field in the (111) direction for either Si or Ge. The second is a perturbation method and is expected to give good results only for Ge.Keywords
This publication has 5 references indexed in Scilit:
- Observation of Quantum Effects in Cyclotron ResonancePhysical Review B, 1955
- Classical Theory of Cyclotron Resonance for Holes in GePhysical Review B, 1955
- Cyclotron Resonance of Electrons and Holes in Silicon and Germanium CrystalsPhysical Review B, 1955
- Motion of Electrons and Holes in Perturbed Periodic FieldsPhysical Review B, 1955
- Quantum Theory of Cyclotron Resonance in SemiconductorsPhysical Review B, 1954