Emitter structures in MOCVD InP solar cells
- 4 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 34, 141-144
- https://doi.org/10.1109/pvsc.1990.111606
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Surface recombination and high efficiency in InP solar cellsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1990
- Mechanism for radiation resistance of InP solar cellsJournal of Applied Physics, 1988
- Indium phosphide solar cells made by ion implantationApplied Physics Letters, 1988
- Indium phosphide shallow homojunction solar cells made by metalorganic chemical vapor depositionApplied Physics Letters, 1987
- n+-p-p+structure InP solar cells grown by organometallic vapor-phase epitaxyIEEE Transactions on Electron Devices, 1987