Electrochemical etching of Si(001) in NH4F solutions: Initial stage and {111} microfacet formation

6 February 1995

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 66 (6) , 766-768
https://doi.org/10.1063/1.114087

Abstract

In situ scanning tunneling microscopy (STM) has been used to examine the etching of an n‐Si(001) electrode in 0.1 M NH₄F. Cathodic polarization facilitated chemical etching of Si(001) to give {111} microfacets as a result of the tendency of Si to form a monohydride terminated surface. Time‐dependent in situ STM atomic images were obtained to demonstrate the preferential etching at the kinks and steps. From the results of the time‐dependent imaging, local etching rates were evaluated for the specific crystallographic directions. A Si(001):H‐(1×1) square structure was also obtained, demonstrating the presence of dihydride configuration in the beginning of the etching.

Keywords

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