Low-threshold AlGaAs/GaAs distributed feedback lasers fabricated by MOCVD

11 September 1986

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 22 (19) , 1023-1024
https://doi.org/10.1049/el:19860699

Abstract

AlGaAs/GaAs distributed feedback (DFB) lasers with a ridge waveguide structure emitting at 0.88 μm were fabricated by normal-pressure metalorganic chemical vapour deposition (MOCVD). The DFB lasers have a low threshold current around 55 mA at room temperature and can be operated stably in a single longitudinal mode up to 40°C.

Keywords

55 MA
LOW THRESHOLD CURRENT
SINGLE LONGITUDINAL MODE
0.88 MICRON
EPITAXIAL GROWTH
METALORGANIC CHEMICAL VAPOUR DEPOSITION
40°C
III-V SEMICONDUCTORS
STABLE OPERATION
DISTRIBUTED FEEDBACK LASERS
0.88 MICRON WAVELENGTH EMISSION
ALGAAS-GAAS SEMICONDUCTOR LASERS
RIDGE WAVEGUIDE STRUCTURE
MOCVD
VPE
DFB LASERS

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