10 GHz/10 W internally matched flip-chip GaAs power f.e.t.s

13 March 1980

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 16 (6) , 205-206
https://doi.org/10.1049/el:19800147

Abstract

A flip-chip GaAs power f.e.t. delivering 10 W power output with 3 dB gain has been realised at 10 GHz by using a newly developed internal matching technique, in which the f.e.t. chips are directly connected to the lumped capacitors in the matching networks.

Keywords

LUMPED CAPACITORS
GAAS POWER FET
SHF
3 DB GAIN
FLIP CHIP
PERFORMANCE
X-BAND
10 GHZ 10 W FET
SOLID STATE MICROWAVE DEVICES
INTERNAL MATCHING TECHNIQUE

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