Experimental investigation of the excess charge
- 1 May 1977
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 6 (3) , 373-382
- https://doi.org/10.1007/bf02660493
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Normal modes of semiconductor p-n–junction devices for material-parameter determinationJournal of Applied Physics, 1976
- Determination of the bulk carrier lifetime in the low-doped region of a silicon power diode, by the method of open circuit voltage decay†International Journal of Electronics, 1973
- Measurement of Minority Carrier Lifetime and Surface Effects in Junction DevicesProceedings of the IRE, 1955
- The Theory ofp-nJunctions in Semiconductors andp-nJunction TransistorsBell System Technical Journal, 1949