Structural studies of ultrathin zirconia dielectrics
- 1 September 2002
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Letters
- Vol. 82 (9) , 519-528
- https://doi.org/10.1080/09500830210157108
Abstract
We present detailed structural and chemical studies on ultrathin zirconia films grown by ultraviolet oxidation and natural (no ultraviolet light) oxidation of Zr precursor metal layers on SiO2-passivated Si(100) wafers. Quantitative electron-energy-loss spectroscopy (EELS) was used to obtain the chemical composition and electronic structure on an atomic scale. The EELS OK near-edge fine structure was used as a fingerprint to study the stoichiometry and composition variation in the dielectric stacks. X-ray absorption spectroscopy studies were performed in order to aid interpretation of the EELS results. The electronic structure data are correlated with the electrical performance of the films.Keywords
This publication has 27 references indexed in Scilit:
- High temperature stability in lanthanum and zirconia-based gate dielectricsJournal of Applied Physics, 2001
- Correlation of Surface and Bulk Order in Low Surface Energy PolymersMacromolecules, 2001
- Electrical properties of ZrO2 gate dielectric on SiGeApplied Physics Letters, 2000
- NEXAFS investigations of transition metal oxides, nitrides, carbides, sulfides and other interstitial compoundsSurface Science Reports, 1997
- Bonding and electronic structure in zirconia pseudopolymorphs investigated by electron energy-loss spectroscopyPhysical Review B, 1996
- Oxygen K near‐edge spectra of amorphous silicon suboxidesJournal of Microscopy, 1995
- Variation of the oxygen content in tetragonal, calcium oxide-doped zirconiaSolid State Ionics, 1994
- Oxygennear-edge fine structure: An electron-energy-loss investigation with comparisons to new theory for selectedTransition-metal oxidesPhysical Review B, 1982
- X-ray photoelectron and ultraviolet photoelectron studies of the oxidation and hydriding of zirconiumJournal of Nuclear Materials, 1982
- The Migration of Metal and Oxygen during Anodic Film FormationJournal of the Electrochemical Society, 1965