EXCESS CURRENT GENERATION DUE TO REVERSE BIAS P-N JUNCTION STRESS
- 15 October 1968
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 13 (8) , 264-266
- https://doi.org/10.1063/1.1652602
Abstract
A previously unreported method of generating excess p‐n junction current is shown to degrade the current gain of transistors. Experimental evidence indicates the excess current is a surface effect which is not associated with ion drift. Avalanche breakdown is shown to be neither a necessary nor sufficient cause for degradation.Keywords
This publication has 3 references indexed in Scilit:
- Surface recombination in semiconductorsSurface Science, 1968
- Inversion of Oxidized Silicon Surfaces by Alkali MetalsJournal of the Electrochemical Society, 1965
- Internal Field Emission in SiliconJunctionsPhysical Review B, 1957