Épitaxie en phase liquide des composés III–V sur substrat InP
- 31 December 1975
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 31, 204-209
- https://doi.org/10.1016/0022-0248(75)90132-3
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Révélation métallographique des défauts cristallins dans InPJournal of Crystal Growth, 1975
- Thickness and surface morphology of GaAs LPE layers grown by supercooling, step-cooling, equilibrium-cooling, and two-phase solution techniquesJournal of Crystal Growth, 1974
- Substrate orientation and surface morphology of GaAs liquid phase epitaxial layersJournal of Crystal Growth, 1974
- Preparation and properties of CdSnP2/InP heterojunctions grown by LPE from Sn solutionJournal of Applied Physics, 1974
- Auger electron spectroscopyContemporary Physics, 1973
- Photoemission from cesium-oxide-activated InGaAsPApplied Physics Letters, 1973
- Magnesium-doped GaAs and Alx Ga1−x As by molecular beam epitaxyJournal of Applied Physics, 1972
- Three-level oscillator: a new form of transferred-electron deviceElectronics Letters, 1970