Droplet Model of Electron-Hole Liquid Condensation in Semiconductors

A model based on noninteracting droplet fluctuations is used to describe the phase diagram for electron-hole liquid condensation in semiconductors. All liquid and gas densities are related to the liquid density at low $T$. Good agreement is obtained by fitting recent detailed measurements of the phase diagram for Ge, and an experimental estimate of droplet surface tension (∼1.0×${10}^{-4\mathrm{}}$ erg/${\mathrm{cm}}^2$) is obtained. Theoretical values of the critical temperature and density for Ge are given. A theoretical phase diagram for Si is presented.