Photoconduction in Cd1-xMnxTe

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Abstract
The photoconductivity has been studied in the semimagnetic semiconductor Cd1-x Mn x Te in the temperature region 4.2–300 K and in the spectral interval 0.6–2.5 eV. The content of the magnetic Mn2+ ions in the measured single crystals was x=0.05, 0.30 and 0.50. The forbidden gap E g determined from the intrinsic peak position in the spectral dependence of the photosensitivity showed a normal blue shift down to 4.2 K in all crystals. The E g values extrapolated to T=0 were E g(x=0.05)=1.64 eV, E g(0.30)=2.04 eV and E g(0.50)=2.24 eV. In external magnetic fields up to 8 T a red shift of E g was found. An acceptor level responsible for both of the dark conductivity and the sensitizing of the photoconductivity was found 0.15 eV above the valence band in the x=0.05 crystal. The acceptor was found to become deeper with increasing Mn content.

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