Intracenter Transition in EL2 Observed in Photocurrent Spectrum
- 1 May 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (5A) , L302-304
- https://doi.org/10.1143/jjap.24.l302
Abstract
At low temperature (4.2 K) photocurrent spectra of undoped semi-insulating GaAs crystals exhibit an extra band centered at about 1.17 eV and a fine structure between 1.04 and 1.10 eV. These structures are virtually identical to those of the optical absorption spectra recently reported by Kaminska et al., who claimed that they are ascribable to the intracenter transitions in EL2, because the structures are never observed in their photocurrent spectra. We discuss the cause of inconsistency between their result and ours and also some mechanisms in which the intracenter transition in EL2 is observed in the photocurrent spectrum.Keywords
This publication has 6 references indexed in Scilit:
- Optical Properties of As-Antisite andDefects in GaAsPhysical Review Letters, 1984
- Intracenter transitions in the dominant deep level (EL2) in GaAsApplied Physics Letters, 1983
- antisite defect in GaAsPhysical Review B, 1983
- Photoluminescence and photoluminescence excitation spectroscopy of the EL2 emission band in GaAsJournal of Applied Physics, 1983
- Deep-level optical spectroscopy in GaAsPhysical Review B, 1981
- Photoelectric Spectroscopy – A New Method of Analysis of Impurities in SemiconductorsPhysica Status Solidi (a), 1977