Electronic structure and dynamical behaviour of different bound-exciton complexes in ZnSe bulk crystals
- 1 April 1993
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 185 (1-4) , 325-331
- https://doi.org/10.1016/0921-4526(93)90255-5
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Exciton complexes in ZnSe layers: a tool for probing the strain distributionJournal of Crystal Growth, 1992
- Spectroscopy of bound excitons in cubic ZnS at moderate to high excitation densitiesPhysical Review B, 1989
- Emissions related to donor-bound excitons in highly purified zinc selenide single crystalsPhysical Review B, 1987
- Stress effects on excitons bound to neutral acceptors in InPPhysical Review B, 1984
- Excited states of bound excitons in wurtzite‐type semiconductorsPhysica Status Solidi (b), 1983
- Properties of excitons bound to neutral donorsPhysical Review B, 1981
- Donor bound-exciton excited states in zinc selenidePhysical Review B, 1981
- On the origin of bound exciton lines in indium phosphide and gallium arsenideJournal of Physics C: Solid State Physics, 1974
- Transition line strengths for excitons bound to neutral acceptors in direct-gap semiconductorsJournal of Physics C: Solid State Physics, 1973
- Optical Properties of Substitutional Donors in ZnSePhysical Review B, 1972