Thickness dependent properties of ZnSe on (100) GaAs grown by atomic layer epitaxy
- 2 April 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 138 (1-4) , 136-139
- https://doi.org/10.1016/0022-0248(94)90794-3
Abstract
No abstract availableKeywords
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