Lateral solid phase crystallization of amorphous Si induced by patterned indium tin oxide on a glass substrate

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Abstract
Undoped amorphous silicon films were deposited by plasma-enhanced chemical vapor deposition on patterned indium tin oxide (ITO) onto glass substrate. The solid-phase crystallization of these films, after successive annealing at 500 and 600 °C, was studied by optical and transmission electron microscopy. It was found that nucleation occurs very quickly on ITO and slowly on glass. The ITO patterns act as nucleation centers for grains which laterally grow and the crystalline phase spread over the glass. Results are compared with those obtained from silicon films deposited by low pressure chemical vapor deposition.