Silicon dioxide breakdown induced by SHE (substrate hot electron) injection

• 1 August 1997
• journal article
• research article
• Published by Wiley in Electronics and Communications in Japan (Part II: Electronics)
• Vol. 80  (8) , 11-19
• https://doi.org/10.1002/(sici)1520-6432(199708)80:8<11::aid-ecjb2>3.0.co;2-5

Abstract

Keywords

• GATE OXIDE FILM
• SHE INJECTION
• HIGH‐ENERGY ELECTRON
• LOCAL BREAKDOWN
• AGING BREAKDOWN