In-situ growth of quantum dot structures by the Stranski-Krastanow growth mode
- 31 December 1996
- journal article
- review article
- Published by Elsevier in Progress in Crystal Growth and Characterization of Materials
- Vol. 33 (4) , 423-471
- https://doi.org/10.1016/s0960-8974(96)00090-3
Abstract
No abstract availableThis publication has 60 references indexed in Scilit:
- Inhibitions of three dimensional island formation in InAs films grown on GaAs (111)A surface by molecular beam epitaxyApplied Physics Letters, 1996
- Improved size homogeneity of InP-on-GaInP Stranski-Krastanow islands by growth on a thin GaP interface layerJournal of Crystal Growth, 1995
- Relationship between self-organization and size of InAs islands on InP(001) grown by gas-source molecular beam epitaxyApplied Physics Letters, 1995
- Band filling at low optical power density in semiconductor dotsApplied Physics Letters, 1995
- Observation of strain effects in semiconductor dots depending on cap layer thicknessApplied Physics Letters, 1995
- Radiative recombination in type-II GaSb/GaAs quantum dotsApplied Physics Letters, 1995
- Optical investigation of the self-organized growth of InAs/GaAs quantum boxesJournal of Crystal Growth, 1995
- Surface migration induced self-aligned InAs islands grown by molecular beam epitaxyApplied Physics Letters, 1995
- Study of the two-dimensional–three-dimensional growth mode transition in metalorganic vapor phase epitaxy of GaInP/InP quantum-sized structuresApplied Physics Letters, 1994
- Photoluminescence of overgrown GaAs-GaAlAs quantum dotsSuperlattices and Microstructures, 1989