Model for the Electronic Properties of Amorphous Semiconductors

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Abstract
The interaction of electrons and of holes with the two-level tunneling modes appearing in certain amorphous semiconductors is studied theoretically. An electron or a hole can be localized in the vicinity of a tunneling mode; a tunneling mode can also mediate an effective electron-electron or hole-hole attraction which gives rise to localized electron or hole pairs. These electronic states provide a unified explanation for numerous experimentally observed properties, some of which have not been discussed before.