Ion Implanted Silicon Molecular Beam Epitaxy (I2 Si MBE)
- 1 January 1980
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 19 (S1)
- https://doi.org/10.7567/jjaps.19s1.637
Abstract
Arsenic-doped n-type silicon epitaxial films have been grown by molecular beam epitaxial technique, utilizing low energy As+ ion implantation. A convenient acronym for this combination is I2 Si MBE for Ion Implanted SiMolecular Beam Epitaxy. Arsenic ions (As+) accelerated to energies between 400 and 800 eV have shown a high sticking coefficient on a heated silicon surface. Precise control of doping density and profile has been achieved. Growth conditions have been defined at which epitaxial films with bulk characteristics can be grown.Keywords
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