DBR lasers emitting at 1060 nm with first-ordergrating in (InGa)P waveguide layer
- 27 May 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (11) , 902-903
- https://doi.org/10.1049/el:19990631
Abstract
The realisation of DBR diode lasers with a first-order grating fabricated by holographic lithography in an (InGa)P waveguide layer is described for the first time. The lasers show excellent characteristics with a threshold current density of 100 A/cm2 and a CW output power of 75 mW at 25°C.Keywords
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