A 20-GHz frequency divider implemented with heterojunction bipolar transistors

1 September 1987

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 8 (9) , 383-385
https://doi.org/10.1109/EDL.1987.26668

Abstract

This paper reports a high-speed frequency divider implemented with AlGaAs/InGaAs/GaAs heterojunction bipolar transistors (HBT's). The divide-by-four static frequency divider was fabricated with a fully self-aligned dual-lift-off HBT process. A maximum operating frequency of 20.1 GHz was achieved. This is the highest frequency ever reported for static frequency dividers.

Keywords

FREQUENCY CONVERSION
HETEROJUNCTION BIPOLAR TRANSISTORS
GALLIUM ARSENIDE
INDIUM GALLIUM ARSENIDE
CIRCUITS
DIELECTRICS
PHOTONIC BAND GAP
MOLECULAR BEAM EPITAXIAL GROWTH
EPITAXIAL LAYERS
DOPING