Halo doping effects in submicron DI-LDD device design

• 1 January 1985
• proceedings article
• Published by Institute of Electrical and Electronics Engineers (IEEE)
• p. 230-233
• https://doi.org/10.1109/iedm.1985.190938

Abstract

Keywords

• POWER MOSFET
• DESIGN OPTIMIZATION
• DEGRADATION
• BREAKDOWN VOLTAGE
• NUMERICAL ANALYSIS
• AVALANCHE BREAKDOWN
• THRESHOLD VOLTAGE
• DOPING