Deposition of indium nitride by low energy modulated indium and nitrogen ion beams

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Abstract
Indium nitride deposition on Si(100) using modulated In+ and N+2 has been carried out in a mass-separated low energy ion beam system. In+ and N+2 were generated in a Colutron ion source loaded with pure indium and fed with nitrogen, and were focused into a Wien filter. The mass analyzer was switched manually or by a computer for modulating the selection of In+ and N+2. After passing through the Wien filter, the selected ion beam was focused to the target chamber and was decelerated by a five-element deceleration lens in front of the target. In situ x-ray photoelectron spectroscopy (XPS) was used for film characterization. The spectral data confirmed the formation of InNx but the x value was less than unity for films prepared using ion energies of 5–100 eV and In/N dose ratios of 2–6. For example, the film prepared with an In/N ratio of 1/6 at a beam energy of 5 eV showed a composition of InN0.4. It was found that argon ion sputtering of this film at 1 keV and at a polar angle of 80° further depleted the nitrogen content and changed the composition to InN0.17. The argon bombardment result suggests that nitrogen depletion in the indium nitride films prepared by ion beam deposition in this study may be induced by ion bombardment during the film growth. In addition to this problem, it was also found that nitrogen bombardment in the early stage of film deposition led to the nitridation of the substrate. The damage of the crystallinity of the substrate is likely to prevent heteroepitaxial growth of InN on Si.

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