Abrupt high hole concentration profiles in GaAs by Zn+P dual implantation

22 June 1989

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 25 (13) , 861-863
https://doi.org/10.1049/el:19890580

Abstract

In the letter we report that through the use of rapid thermal annealing (RTA) and the coimplantation of phosphorus an effective way of preventing the in-diffusion of zinc has been achieved. We have observed that the electrical activation characteristics of the Zn-implanted samples have been modified after the coimplantation of phosphorus. Furthermore, abrupt electrical profiles with hole concentrations of the order of 6×10¹⁹/cm³ have been achieved after annealing at 850°C for 30s.

Keywords

RTA
DUAL IMPLANTATION
COIMPLANTATION
30 S
RAPID THERMAL ANNEALING
ABRUPT ELECTRICAL PROFILES
HOLE CONCENTRATIONS
GAAS:ZN
ELECTRICAL ACTIVATION CHARACTERISTICS
ION IMPLANTATION
ABRUPT HIGH HOLE CONCENTRATION PROFILES
850 C

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