Polymer field-effect transistors by a drawing method
- 7 June 2004
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 84 (23) , 4608-4610
- https://doi.org/10.1063/1.1751222
Abstract
We demonstrated the polymer field-effect transistors (FETs) utilizing regioregular poly(3-alkylthiophene)s (P3AT) films prepared by a drawing method. The P3AT film exhibited large optical dichroic ratio, which originated in the polymer backbones aligned to the drawing direction. In-plane anisotropy and enhancement of FET characteristics have been observed that are caused by molecular alignment. In the case of poly(3-dodecylthiophene), the hole mobility along the drawing direction was enhanced by a factor of 25 compared with that of spin-coated film.Keywords
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