Temperature dependence of F-centre accumulation efficiency in doped alkali halides
- 14 August 1977
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 10 (15) , 2903-2915
- https://doi.org/10.1088/0022-3719/10/15/024
Abstract
A model explaining the temperature dependence of the efficiency of F-centre accumulation (as well as F2-centre destruction), observed in the course of steady-state experiments, has been developed. The model takes into account three- (or one-) dimensional continuous diffusion of H centres, resulting in a primary process, and their decay due to the diffusion-controlled: (i) annihilation, (ii) tunnelling recombination with F centres and (iii) localization by pre-existing defects (or recombination with F2 centres).Keywords
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