The theory of photon-stimulated current spectroscopy

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Abstract
The use of photon-stimulated current spectroscopy (PSC) for the examination of defect levels in insulators and semiconductors is described and a quantitative analysis presented. The mathematical treatment is developed separately for the monomolecular (no retrapping) and bimolecular (retrapping) cases. The analysis describes how the trap depth (Et), the capture cross section of the traps (St) and the trap density (Nt) can be evaluated for each case.