A low noise broadband GaAs MESFET monolithic distributed preamplifier
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 57-60 vol.1
- https://doi.org/10.1109/mwsym.1995.406098
Abstract
It is shown that the equivalent input noise current density of a distributed preamplifier of an optical receiver can be improved by using large gate line matching impedance. A monolithic GaAs MESFET distributed preamplifier utilizing this design consideration was fabricated. Using a 35 /spl mu/m InGaAs p-i-n photodiode, it was shown to have an equivalent input noise current density of 8 pA//spl radic/(Hz) and an 8 GHz bandwidth. To date, this is the best known result for a 0.8 /spl mu/m GaAs MESFET process.<>Keywords
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