Effect of Sn incorporation on the growth mechanism of sprayed SnO2 films

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Abstract
In order to probe into the growth mechanism of sprayed SnO2 films, the films were deposited with different Sn concentrations in the precursor solution. The orientational properties were determined using grazing incidence x‐ray diffraction. The preferred growth changed from [110] to [200] direction as the Sn incorporation was increased. Such a change in growth can be anticipated from structure factor calculations. The compositional analysis was done using x‐ray photoelectron spectroscopy. The Hall effect measurements indicated that the carrier concentration and mobility are sensitively dependent on the orientation and composition of the films.