Dual Work Function CMOS Gate Technology Based on Metal Interdiffusion
- 1 January 2001
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- High performance damascene metal gate MOSFETs for 0.1 μm regimeIEEE Transactions on Electron Devices, 2000
- Diffusion in titanium and titanium—niobium alloysPhilosophical Magazine, 1963