A helium atom diffraction study of the epitaxial growth of cobalt on Cu(100)

1 October 1989

journal article
Published by IOP Publishing in Journal of Physics: Condensed Matter

Vol. 1 (SB) , SB177-SB178
https://doi.org/10.1088/0953-8984/1/sb/030

Abstract

Between 247 and 327 K cobalt grows epitaxially on Cu(100), with a smaller diffusion coefficient for cobalt on copper than for cobalt on cobalt. It is possible to grow ten monolayers of cobalt on Cu(100) before strain in the layers causes the defect density to rise. Above 347 K growth is perturbed-probably by interdiffusion.

Keywords

ATOM DIFFRACTION
EPITAXIAL GROWTH
DIFFRACTION STUDY
DIFFUSION COEFFICIENT
K GROWTH
GROW TEN
SMALLER DIFFUSION
LAYERS CAUSES

This publication has 1 reference indexed in Scilit:

A leed determination of the structure of cobalt overlayers grown on a single-crystal Cu(001) substrate
Surface Science, 1987