Digital Imaging of the Effect of Photoetching on the Photoresponse of n-Type Tungsten Diselenide and Molybdenum Diselenide Single Crystal Electrodes
- 1 January 1996
- journal article
- research article
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry
- Vol. 100 (2) , 760-768
- https://doi.org/10.1021/jp952001x
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- The Role of Surface Defects in the Photooxidation of Iodide at n-MoSe2: Evidence for a Local "Autocatalytic" EffectThe Journal of Physical Chemistry, 1995
- Dynamic electrolyte electroreflectance measurements for the in situ detection of flatband potential shiftElectrochimica Acta, 1992
- : Optical and electrical properties as related to surface passivation of recombination centersPhysical Review B, 1989
- Electrolyte Electroreflectance and Photoelectrochemical Topological Investigation of Polycrystalline CuInSe2 Electrodes by Scanning Light‐Spot Optical MicroscopyJournal of the Electrochemical Society, 1988
- Passivation of recombination centers on thesurfacePhysical Review B, 1988
- Photoelectrochemical ImagingJournal of the Electrochemical Society, 1984
- Charge Collection Microscopy on p ‐ WSe2: Recombination Sites and Minority Carrier Diffusion LengthJournal of the Electrochemical Society, 1982
- Semiconductor Electrodes: XXXIII . Photoelectrochemistry of n‐Type in AcetonitrileJournal of the Electrochemical Society, 1981
- Influence of crystal surface orientation on redox reactions at semiconducting MoS2Electrochimica Acta, 1979
- Layer‐Type Transition Metal Dichalcogenides — a New Class of Electrodes for Electrochemical Solar CellsBerichte der Bunsengesellschaft für physikalische Chemie, 1977