Status of MBE technology for the flexible manufacturing of HgCdTe focal plane arrays
- 1 August 1996
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 25 (8) , 1411-1415
- https://doi.org/10.1007/bf02655043
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Uniform low defect density molecular beam epitaxial HgCdTeJournal of Electronic Materials, 1996
- Heteroepitaxy of HgCdTe(112) infrared detector structures on Si(112) substrates by molecular-beam epitaxyJournal of Electronic Materials, 1996
- Molecular beam epitaxial growth and properties of short-wave infrared Hg0.3Cd0.7Te filmsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- HgCdTe molecular beam epitaxy technology: A focus on material propertiesJournal of Electronic Materials, 1995
- Growth and properties of In- and As-doped HgCdTe by MBEJournal of Crystal Growth, 1993
- State of the art of Hg-melt LPE HgCdTe at Santa Barbara Research CenterPublished by SPIE-Intl Soc Optical Eng ,1992
- Anomalous Electrical Properties of p-Type Hg1−xCdxTeJournal of Applied Physics, 1971