Bound exciton recombination in beryllium-doped silicon
- 10 April 1981
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 14 (10) , L255-L261
- https://doi.org/10.1088/0022-3719/14/10/002
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Zeeman studies of the 0.839eV emission in SI GaAs:CrSolid State Communications, 1980
- Bound excitons at doubly ionizable acceptors in GaSbPhysical Review B, 1978
- Excitation density dependence of the luminescence from bound multi-exciton complexes in phosphorus doped siliconJournal of Physics C: Solid State Physics, 1978
- A shell model of bound multiexciton complexes in siliconCanadian Journal of Physics, 1977
- Fine structure in the bound exciton and multiple bound exciton luminescence from aluminium-doped siliconJournal of Physics C: Solid State Physics, 1977
- Fine Structure of the Luminescence from Excitons and Multiexciton Complexes Bound to Acceptors in SiPhysical Review Letters, 1977
- Study of the Homology between Silicon and Germanium by Thermal-Neutron SpectrometryPhysical Review B, 1972
- Study of Beryllium and Beryllium-Lithium Complexes in Single-Crystal SiliconPhysical Review B, 1972
- Stress Effects on Excitons Bound to Axially Symmetric Defects in SemiconductorsPhysical Review B, 1970
- Isoelectronic Donors and AcceptorsPhysical Review Letters, 1966