Application of Heterojunction Bipolar Transistors to High Speed, Small-Scale Digital Integrated Circuits

1 October 1984

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 133-136
https://doi.org/10.1109/gaas.1984.10401300

Abstract

The fabrication and performance of a number of small-scale (20-60 transistors) integrated circuits based on GaAs/(Ga,Al )As heterojunction bipolar transistors (HBTs) in an emitter-coupled logic approach are described. The circuits include ring oscillators, with propagation delay times down to 40 pS in current-mode logic gates; frequency dividers, operating with input frequencies up to 8.5 GHz; and a 4-bit pattern generator, operating with clock frequencies up to more than 2 GHz (data rates of 4-Gbit/s in nonreturn-to-zero format). Initial results of transistor uniformity and circuit yield are shown to be excellent.

Keywords

LOGIC GATES
TRANSISTORS
GALLIUM ARSENIDE
VOLTAGE MEASUREMENT
GENERATORS
RING OSCILLATORS
RESISTORS

This publication has 0 references indexed in Scilit: