Comparison of Al and TiPtAu metallisations on a GaAs MESFET with GeMoW ohmic contacts

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Abstract
Metal–semiconductor field effect transistors (MESFETs) were compared using either TiPtAu or Al as both gate metal and interconnect metal to GeMoW source/drain contacts. The GeMoW/Al MESFET demonstrated superior I–V characteristics following thermal cycling at 500°C. These results demonstrate a complete device and interconnect metallisation scheme capable of withstanding thermal stressing at 500°C.

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