Electrochemical metal deposition on atomically nearly-flat silicon surfaces accompanied by nano-hole formation
- 1 June 1999
- journal article
- Published by Elsevier in Electrochimica Acta
- Vol. 44 (21-22) , 3725-3729
- https://doi.org/10.1016/s0013-4686(99)00077-8
Abstract
No abstract availableFunding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 22 references indexed in Scilit:
- Hydrogen Exchange Reaction on Hydrogen‐Terminated (100) Si Surface during Storage in WaterJournal of the Electrochemical Society, 1998
- A Comparative Electrochemical Study of Copper Deposition onto Silicon from Dilute and Buffered Hydrofluoric AcidsJournal of the Electrochemical Society, 1998
- Electrochemical and Radiochemical Study of Copper Contamination Mechanism from HF Solutions onto Silicon SubstratesJournal of the Electrochemical Society, 1997
- Effect of chemical oxide layers on platinum-enhanced oxidation of siliconJournal of Applied Physics, 1997
- Atomic resolution images of H-terminated Si(111) surfaces in aqueous solutionsApplied Physics Letters, 1992
- Step-flow mechanism versus pit corrosion: scanning-tunneling microscopy observations on wet etching of Si(111) by HF solutionsChemical Physics Letters, 1991
- Chemically etched silicon surfaces viewed at the atomic level by force microscopyJournal of the American Chemical Society, 1991
- Reaction of water with hydrofluoric acid treated silicon(111) and (100) surfacesJournal of Vacuum Science & Technology A, 1989
- Decomposition Potentials of Crystalline Silicon as Related to the Photocurrent Stability of p‐n Junction Silicon Semiconductor ElectrodesJournal of the Electrochemical Society, 1987
- Unusually Low Surface-Recombination Velocity on Silicon and Germanium SurfacesPhysical Review Letters, 1986