Invited: Molecular Beam Epitaxy with Ionized Beam Doping

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Abstract
Molecular Beam Epitaxy (MBE) with ion beams as dopants is proposed, and experiments with Zn in GaAs are reported. In conventional MBE, impurities with low sticking coefficients have not been used because doping into MBE layers involves simultaneous evaporation. We propose a method of ionizing the dopant molecular beam and increasing its effective sticking coefficient. With ionization an effective sticking coefficient of 0.01–0.03 for Zn ions in GaAs is obtained as compared with a value of 10-7 for neutral Zn. This value is much larger than that of any other p-type impurities for GaAs except for Ge which is amphoteric. A strong ion acceleration is not essential for increasing sticking coefficient, and activated ions arriving at the substrate without any kinetic energy can react and bond with the surface atoms. This modification of MBE can be applied to many other dopants and is a useful method to fabricate various electron devices.

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