Gain analysis for surface emission by optical pumping of wurtzite GaN
- 1 July 1996
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (1) , 94-96
- https://doi.org/10.1063/1.118131
Abstract
We analyzed optically pumped surface emissions by calculating the optical gain in bulk GaN. We found that GaN has a large gain of over 104 cm−1 and no gain saturation up to 25 000 cm−1 . This high optical gain is generated by the high joint-density of states due to the three valence bands close to band edge and the large effective mass of the conduction band. As a result, although the gain required for lasing in the vertical direction is very high, the high excitation of carriers can achieve this without an intentional high reflection structure.Keywords
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