A monolithic 3.7 W silicon power amplifier with 59% PAE at 0.9 GHz

Publisher Website

20 January 2003

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/isscc.1999.759206

Abstract

No abstract available

This publication has 2 references indexed in Scilit:

A 3.6 V 4 W 0.2cc Si power-MOS-amplifier module for GSM handset phones
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
A 1.9 GHz low-voltage silicon bipolar receiver front-end for wireless personal communications systems
IEEE Journal of Solid-State Circuits, 1995