Investigation of the complex permittivity of n-type silicon at millimeter wavelengths
- 1 June 1983
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (6) , 3394-3398
- https://doi.org/10.1063/1.332452
Abstract
Measurements of the complex permittivity at 107.3 GHz of n‐type silicon specimens in the 5–50 Ω cm resistivity range were made using a free space reflection/transmission technique. Reflectance measurements on specimens in the 0.004–5 Ω cm range were obtained. All measurements were compared with a single relaxation time Drude model and a more complete model that was developed which includes Fermi–Dirac statistics and energy dependent lattice and impurity scattering. Although the Drude model was found to reliably predict the complex permittivity of n‐type silicon over a specified range of resistivity, it has limitations which are discussed.This publication has 8 references indexed in Scilit:
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