Depth profiles of 3He ions implanted into solids at energies between 20 and 60 keV
- 1 March 1978
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 49 (3) , 965-970
- https://doi.org/10.1063/1.324693
Abstract
Depth profiles of 20–60‐keV 3He ions incident on surfaces of C, Al, Si, V, Ni, and Zr have been measured using the 3He(d,α)1H reaction. A comparison of the results with theoretical predictions shows rather large discrepancies.This publication has 15 references indexed in Scilit:
- Depth distribution and migration of helium in vanadium at elevated temperaturesJournal of Nuclear Materials, 1976
- Two Methods Using Ion Beams for Detecting and Depth Profiling Light Impurities in MaterialsPublished by American Chemical Society (ACS) ,1976
- Depth Distribution and Migration of Low Z Elements in Solids Using Proton Elastic ScatteringPublished by American Chemical Society (ACS) ,1976
- Proton backscattering as a technique for light ion surface interaction studies in CTR materials investigationsJournal of Nuclear Materials, 1974
- Stopping cross sections and backscattering factors for 4He ions in matter Z = 1–92, E(4He) = 400–4000 keVAtomic Data and Nuclear Data Tables, 1974
- Use of the nuclear reaction 16O(d,α)14N in the microanalysis of oxide surface layersNuclear Instruments and Methods, 1973
- Sputtering and backscattering of keV light ions bombarding random targetsRadiation Effects, 1973
- The interaction of injected helium with lattice defects in a tungsten crystalRadiation Effects, 1972
- Heavy-ion range profiles and associated damage distributionsRadiation Effects, 1972
- The Migration of Metal and Oxygen during Anodic Film FormationJournal of the Electrochemical Society, 1965