Study for improvement of solar cell efficiency by impurity photovoltaic effect
- 30 November 1997
- journal article
- Published by Elsevier in Solar Energy Materials and Solar Cells
- Vol. 48 (1-4) , 93-100
- https://doi.org/10.1016/s0927-0248(97)00075-5
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
- Research Foundation for the Electrotechnology of Chubu
This publication has 9 references indexed in Scilit:
- Theoretical Study for Drastic Improvement of Solar Cell EfficiencyJapanese Journal of Applied Physics, 1995
- Efficiency improvements of silicon solar cells by the impurity photovoltaic effectJournal of Applied Physics, 1994
- Spectral behavior of solar cells based on the ‘‘junction near local defect layer’’ designApplied Physics Letters, 1993
- 35% efficient nonconcentrating novel silicon solar cellApplied Physics Letters, 1992
- Growth and characterization of Indium-doped silicon for extrinsic IR detectorsIEEE Transactions on Electron Devices, 1980
- Techniques for Lapping and Staining Ion‐Implanted LayersJournal of the Electrochemical Society, 1979
- Impurity photovoltaic effect in siliconEnergy Conversion, 1970
- Spectroscopic Investigation of Group-III Acceptor States in SiliconPhysical Review B, 1967
- Stain films on siliconJournal of Physics and Chemistry of Solids, 1960