Gateless AlGaN/GaN HEMT response to block co-polymers
- 19 February 2004
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 48 (5) , 851-854
- https://doi.org/10.1016/j.sse.2003.10.002
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures – Part B: Sensor applicationsphysica status solidi (c), 2003
- pH response of GaN surfaces and its application for pH-sensitive field-effect transistorsApplied Physics Letters, 2003
- Comparison of Pt/GaN and Pt/4H-SiC gas sensorsSolid-State Electronics, 2003
- Reversible barrier height changes in hydrogen-sensitive Pd/GaN and Pt/GaN diodesApplied Physics Letters, 2003
- Hydrogen-sensitive GaN Schottky diodesSolid-State Electronics, 2003
- Gas sensitive GaN/AlGaN-heterostructuresSensors and Actuators B: Chemical, 2002
- GaN-based heterostructures for sensor applicationsDiamond and Related Materials, 2002
- Wetting Behaviour of GaN Surfaces with Ga- or N-Face PolarityPhysica Status Solidi (b), 2001
- Group-III-Nitride Based Gas Sensing DevicesPhysica Status Solidi (a), 2001
- High-Electron-Mobility AlGaN/GaN Transistors (HEMTs) for Fluid Monitoring ApplicationsPhysica Status Solidi (a), 2001