Pressure-induced phase transitions in InBi
- 7 November 1975
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 8 (21) , L447-L450
- https://doi.org/10.1088/0022-3719/8/21/007
Abstract
The electrical resistivity of single-crystal InBi has been measured in a hydrostatic pressure cell to 15 kbar and in a Bridgman anvil apparatus to 90 kbar. The resistivity decreases linearly with pressure to 19 kbar, where an abrupt jump indicates a first-order crystallographic transition. A distinct change in slope occurs at 40-45 kbar and is possibly due to a second-order displacive transition.Keywords
This publication has 7 references indexed in Scilit:
- Thermal expansion of InBiPhysics Letters A, 1973
- The elastic behaviour of InBi single crystalsJournal of Physics and Chemistry of Solids, 1973
- Induced High-Pressure Phases in the Bi-In, Bi-Sn, and Bi-Tl Alloy SystemsPhysical Review B, 1972
- Anisotropy in the resistivity of NbSe2with pressureJournal of Physics C: Solid State Physics, 1972
- Hall effect measurements on single crystals at pressures extending to 70 kbJournal of Physics E: Scientific Instruments, 1968
- High‐Pressure‐High‐Temperature Polymorphism of the Oxides of LeadJournal of the American Ceramic Society, 1961
- The structural crystallography of indium bismuthideActa Crystallographica, 1956