Development of static random access memories using complementary heterostructure insulated gate field effect transistor technology
- 4 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 143-146
- https://doi.org/10.1109/gaas.1990.175471
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Distributive nature of gate current and negative transconductance in heterostructure field-effect transistorsIEEE Transactions on Electron Devices, 1989
- A self-aligned gate III-V heterostructure FET process for ultrahigh-speed digital and mixed analog/digital LSI/VLSI circuitsIEEE Transactions on Electron Devices, 1989