An isotopic labeling study of the growth of thin oxide films on Si(100)
- 18 September 1995
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 67 (12) , 1742-1744
- https://doi.org/10.1063/1.115035
Abstract
The mechanism of thin (<8 nm) oxide growth on Si(100) has been studied by high-resolution medium energy ion scattering in combination with oxygen isotope substitution in the T=800–900 °C and 0.1–1 Torr oxygen pressure regime. Isotopic labeling experiments demonstrate that the Deal–Grove model breaks down for these films. In addition to the traditional oxidation reaction at the Si/SiO2 interface, two other spatially specific reactions take place during thermal oxidation: an exchange reaction at the oxide surface and an oxidation reaction in the near-interfacial region.Keywords
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